Essentials Of Semiconductor Physics
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Basic Semiconductor Physics
Author: Chihiro Hamaguchi
language: en
Publisher: Springer Science & Business Media
Release Date: 2009-12-09
When the ?rst edition ofBasic Semiconductor Physics was published in 2001, there were already many books, review papers and scienti?c journals de- ing with various aspects of semiconductor physics. Since many of them were dealing with special aspects of newly observed phenomena or with very f- damental physics, it was very di?cult to understand the advanced physics of semiconductors without the detailed knowledge of semiconductor physics. For this purpose the author published the ?rst edition for the readers who are involved with semiconductor research and development. Basic Semiconductor Physics deals with details of energy band structures, e?ective mass eq- tion and k·p perturbation, and then describes very important phenomena in semiconductors such as optical, transport, magnetoresistance, and quantum phenomena. Some of my friends wrote to me that the textbook is not only basic but advanced, and that the title of the book does not re?ect the c- tents. However, I am still convinced that the title is appropriate, because the advanced physics of semiconductor may be understood with the knowledge of the fundamental physics. In addition new and advanced phenomena - served in semiconductors at an early time are becoming well-known and thus classi?ed in basic physics. After the publication of the ?rst edition, many typographical errors have been pointed out and the corrected version was published in 2006. The p- lisher and my friends persuade me to revise the book adding new chapters, keeping the subject at the appropriate level.
The Physics of Semiconductors
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Physics of Semiconductor Devices
This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.