The Physics And Technology Of Amorphous Sio2


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The Physics and Technology of Amorphous SiO2


The Physics and Technology of Amorphous SiO2

Author: Roderick A.B. Devine

language: en

Publisher: Springer Science & Business Media

Release Date: 2012-12-06


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The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

Defects in SiO2 and Related Dielectrics: Science and Technology


Defects in SiO2 and Related Dielectrics: Science and Technology

Author: Gianfranco Pacchioni

language: en

Publisher: Springer Science & Business Media

Release Date: 2000-12-31


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Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000

Ion-Irradiation-Induced Damage in Nuclear Materials


Ion-Irradiation-Induced Damage in Nuclear Materials

Author: Diana Bachiller Perea

language: en

Publisher: Springer

Release Date: 2018-09-26


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This thesis investigates the behavior of two candidate materials (a-SiO2 and MgO) for applications in fusion (e.g., the International Thermonuclear Experimental Reactor ITER) and Generation IV fission reactors. Both parts of the thesis – the development of the ionoluminescence technique and the study of the ion-irradiation effects on both materials – are highly relevant for the fields of the ion-beam analysis techniques and irradiation damage in materials. The research presented determines the microstructural changes at different length scales in these materials under ion irradiation. In particular, it studies the effect of the irradiation temperature using several advanced characterization techniques. It also provides much-needed insights into the use of these materials at elevated temperatures. Further, it discusses the development of the ion-beam-induced luminescence technique in different research facilities around the globe, a powerful in situ spectroscopic characterization method that until now was little known. Thanks to its relevance, rigorosity and quality, this thesis has received twoprestigious awards in Spain and France.