The Bounding Approach To Vlsi Circuit Simulation
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The Bounding Approach to VLSI Circuit Simulation
Author: C.A. Zukowski
language: en
Publisher: Springer Science & Business Media
Release Date: 2013-11-11
This book proposes a new approach to circuit simulation that is still in its infancy. The reason for publishing this work as a monograph at this time is to quickly distribute these ideas to the research community for further study. The book is based on a doctoral dissertation undertaken at MIT between 1982 and 1985. In 1982 the author joined a research group that was applying bounding techniques to simple VLSI timing analysis models. The conviction that bounding analysis could also be successfully applied to sophisticated digital MOS circuit models led to the research presented here. Acknowledgments 'me author would like to acknowledge many helpful discussions and much support from his research group at MIT, including Lance Glasser, John Wyatt, Jr. , and Paul Penfield, Jr. Many others have also contributed to this work in some way, including Albert Ruchli, Mark Horowitz, Rich Zippel, Chtis Terman, Jacob White, Mark Matson, Bob Armstrong, Steve McCormick, Cyrus Bamji, John Wroclawski, Omar Wing, Gary Dare, Paul Bassett, and Rick LaMaire. The author would like to give special thanks to his wife, Deborra, for her support and many contributions to the presentation of this research. The author would also like to thank his parents for their encouragement, and IBM for its financial support of t,I-Jis project through a graduate fellowship. THE BOUNDING APPROACH TO VLSI CIRCUIT SIMULATION 1. INTRODUCTION The VLSI revolution of the 1970's has created a need for new circuit analysis techniques.
Relaxation Techniques for the Simulation of VLSI Circuits
Author: Jacob K. White
language: en
Publisher: Springer Science & Business Media
Release Date: 2012-12-06
Circuit simulation has been a topic of great interest to the integrated circuit design community for many years. It is a difficult, and interesting, problem be cause circuit simulators are very heavily used, consuming thousands of computer hours every year, and therefore the algorithms must be very efficient. In addi tion, circuit simulators are heavily relied upon, with millions of dollars being gambled on their accuracy, and therefore the algorithms must be very robust. At the University of California, Berkeley, a great deal of research has been devoted to the study of both the numerical properties and the efficient imple mentation of circuit simulation algorithms. Research efforts have led to several programs, starting with CANCER in the 1960's and the enormously successful SPICE program in the early 1970's, to MOTIS-C, SPLICE, and RELAX in the late 1970's, and finally to SPLICE2 and RELAX2 in the 1980's. Our primary goal in writing this book was to present some of the results of our current research on the application of relaxation algorithms to circuit simu lation. As we began, we realized that a large body of mathematical and exper imental results had been amassed over the past twenty years by graduate students, professors, and industry researchers working on circuit simulation. It became a secondary goal to try to find an organization of this mass of material that was mathematically rigorous, had practical relevance, and still retained the natural intuitive simplicity of the circuit simulation subject.
Polycrystalline Silicon for Integrated Circuit Applications
Author: Ted Kamins
language: en
Publisher: Springer Science & Business Media
Release Date: 2012-12-06
Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.