Optical Delay Interferometers And Their Application For Self Coherent Detection

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Optical Delay Interferometers and Their Application for Self-coherent Detection

Author: Jingshi Li
language: en
Publisher: KIT Scientific Publishing
Release Date: 2014-07-31
Self-coherent receivers are promising candidates for reception of 100 Gbit/s data rates in optical networks. Self-coherent receivers consist of multiple optical delay interferometers (DI) with high-speed photodiodes attached to the outputs. By DSP of the photo currents it becomes possible to receive coherently modulated optical signals. Especially promising for 100 Gbit/s networks is the PolMUX DQPSK format, the self-coherent reception of which is described in detail.
Silicon-organic hybrid (SOH) electro-optic modulators for high-speed and power-efficient communications

Author: Wolf, Stefan
language: en
Publisher: KIT Scientific Publishing
Release Date: 2018-09-28
Silicon-organic hybrid (SOH) modulators add a highly efficient nonlinear organic electro-optic cladding material to the silicon photonic platform, thereby enabling efficient electro-optic modulation. In this book, the application potential of SOH modulators is investigated. Proof-of-principle experiments show that they can be used for high-speed communications at symbol rates up to 100 GBd and operated directly from a field-programmable gate array (FPGA) without additional driver amplifiers.
High-Speed, Low-Power and Mid-IR Silicon Photonics Applications

Author: Luca Alloatti
language: en
Publisher: KIT Scientific Publishing
Release Date: 2013-08-27
In this book, the first high-speed silicon-organic hybrid (SOH) modulator is demonstrated by exploiting a highly-nonlinear polymer cladding and a silicon waveguide. By using a liquid crystal cladding instead, an ultra-low power phase shifter is obtained. A third type of device is proposed for achieving three-wave mixing on the silicon-organic hybrid (SOH) platform. Finally, new physical constants which describe the optical absorption in charge accumulation/inversion layers in silicon are determined.