Nanoengineered Assemblies And Advanced Micro Nanosystems Volume 820
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Nanoengineered Assemblies and Advanced Micro/Nanosystems: Volume 820
Author: Materials Research Society. Meeting
language: en
Publisher:
Release Date: 2004-09-09
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Nanoengineered Assemblies and Advanced Micro/Nanosystems:
Author: David P. Taylor
language: en
Publisher: Cambridge University Press
Release Date: 2014-06-05
This book combines the proceedings of Symposium O, Advanced Microsystems - Integration with Nanotechnology and Biology, and Symposium R, Three-Dimensional Nanoengineered Assemblies II, both from the 2004 MRS Spring Meeting in San Francisco. The book addresses scientific and technology challenges in materials science for advanced nano- and Microsystems - self-assembled materials; interfacial sciences and novel microsystems/microdevices; nanoparticle synthesis and applications; nanomaterials and nanofabrications in microsystems and microdevices; tissue engineering; integrated microanalysis; and nano- and biomicrosystems and devices. Symposium R aimed to advance the practice and progress of nanoengineering in three dimensions. Novel approaches to materials processing and applications for >2D structures that will advance present practice, even if they cannot yet be applied to the nanometer scale, are featured. Included are contact-based processing schemes such as soft lithography, template transfer, self-assembly, biological or biomimetic interactions, and various mass transport processes. The manipulation of nanoparticles and plasmon processes is also addressed, as are three-dimensional photonic structures - even if they are not yet on the nanoscale.
High-Mobility Group-IV Materials and Devices: Volume 809
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.