Elastic And Inelastic Scattering In Electron Diffraction And Imaging

Download Elastic And Inelastic Scattering In Electron Diffraction And Imaging PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Elastic And Inelastic Scattering In Electron Diffraction And Imaging book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages.
Elastic and Inelastic Scattering in Electron Diffraction and Imaging

Author: Zhong-lin Wang
language: en
Publisher: Springer Science & Business Media
Release Date: 2013-06-29
Elastic and inelastic scattering in transmission electron microscopy (TEM) are important research subjects. For a long time, I have wished to systematically summarize various dynamic theories associated with quantitative electron micros copy and their applications in simulations of electron diffraction patterns and images. This wish now becomes reality. The aim of this book is to explore the physics in electron diffraction and imaging and related applications for materials characterizations. Particular emphasis is placed on diffraction and imaging of inelastically scattered electrons, which, I believe, have not been discussed exten sively in existing books. This book assumes that readers have some preknowledge of electron microscopy, electron diffraction, and quantum mechanics. I anticipate that this book will be a guide to approaching phenomena observed in electron microscopy from the prospects of diffraction physics. The SI units are employed throughout the book except for angstrom (A), which is used occasionally for convenience. To reduce the number of symbols used, the Fourier transform of a real-space function P'(r), for example, is denoted by the same symbol P'(u) in reciprocal space except that r is replaced by u. Upper and lower limits of an integral in the book are (-co, co) unless otherwise specified. The (-co, co) integral limits are usually omitted in a mathematical expression for simplification. I very much appreciate opportunity of working with Drs. J. M. Cowley and J. C. H. Spence (Arizona State University), J.
Image Formation in Low-voltage Scanning Electron Microscopy

While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.
High Energy Electron Diffraction and Microscopy

Author: L. M. Peng
language: en
Publisher: Oxford University Press
Release Date: 2004-01-08
This book provides a comprehensive introduction to high energy electron diffraction and elastic and inelastic scattering of high energy electrons, with particular emphasis on applications to modern electron microscopy. Starting from a survey of fundamental phenomena, the authors introduce the most important concepts underlying modern understanding of high energy electron diffraction. Dynamical diffraction in transmission (THEED) and reflection (RHEED) geometries is treated using a general matrix theory, where computer programs and worked examples are provided to illustrate the concepts and to familiarize the reader with practical applications. Diffuse and inelastic scattering and coherence effects are treated comprehensively both as a perturbation of elastic scattering and within the general multiple scattering quantum mechanical framework of the density matrix method. Among the highlights are the treatment of resonance diffraction of electrons, HOLZ diffraction, the formation of Kikuchi bands and lines and ring patterns, and application of diffraction to monitoring of growing surfaces. Useful practical data are summarised in tables including those of electron scattering factors for all the neutral atoms and many ions, and the temperature dependent Debye-Waller factors given for over 100 elemental crystals and compounds.