Image Formation In Low Voltage Scanning Electron Microscopy
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Image Formation in Low-voltage Scanning Electron Microscopy
While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.
Scanning Electron Microscopy
Scanning Electron Microscopy provides a description of the physics of electron-probe formation and of electron-specimen interactions. The different imaging and analytical modes using secondary and backscattered electrons, electron-beam-induced currents, X-ray and Auger electrons, electron channelling effects, and cathodoluminescence are discussed to evaluate specific contrasts and to obtain quantitative information.
Low Voltage Electron Microscopy
Part of the Wiley-Royal Microscopical Society Series, this book discusses the rapidly developing cutting-edge field of low-voltage microscopy, a field that has only recently emerged due to the rapid developments in the electron optics design and image processing. It serves as a guide for current and new microscopists and materials scientists who are active in the field of nanotechnology, and presents applications in nanotechnology and research of surface-related phenomena, allowing researches to observe materials as never before.