Vlsi Electronics Without Special Titles
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Robust Electronic Design Reference Book: no special title
Author: John R. Barnes
language: en
Publisher: Springer Science & Business Media
Release Date: 2004
If you design electronics for a living, you need Robust Electronic Design Reference Book. Written by a working engineer, who has put over 115 electronic products into production at Sycor, IBM, and Lexmark, Robust Electronic Design Reference covers all the various aspects of designing and developing electronic devices and systems that: -Work. -Are safe and reliable. -Can be manufactured, tested, repaired, and serviced. -May be sold and used worldwide. -Can be adapted or enhanced to meet new and changing requirements.
VLSI in Medicine
Author: Norman G. Einspruch
language: en
Publisher: Academic Press
Release Date: 2014-12-01
VLSI Electronics Microstructure Science, Volume 17: VLSI in Medicine deals with the more important applications of VLSI in medical devices and instruments. This volume is comprised of 11 chapters. It begins with an article about medical electronics. The following three chapters cover diagnostic imaging, focusing on such medical devices as magnetic resonance imaging, neurometric analyzer, and ultrasound. Chapters 5, 6, and 7 present the impact of VLSI in cardiology. The electrocardiograph, implantable cardiac pacemaker, and the use of VLSI in Holter monitoring are detailed in these chapters. The neurostimulator is described in Chapter 8. Chapter 9 discusses both implantable and external drug infusion pumps and describes the use of VLSI in a particular external pump. The last two chapters cover topics that apply to the entire field of medical electronics. Engineers, scientists, medical practitioners and researchers will find the book very useful.
Advanced MOS Device Physics
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.