Ultrathin Sio2 And High K Materials For Ulsi Gate Dielectrics Volume 567
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Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567
Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and
Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567
Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and
High-k Gate Dielectrics for CMOS Technology
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.