Two Port Network Theory Based Design Method Of Broadband Doherty Power Amplifier
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Two Port Network Theory Based Design Method of Broadband Doherty Power Amplifier
LTE-Advanced (LTE-A) is a widely used communication standard and it mainly features Carrier aggregation (CA). CA increases the user data rate and efficiently exploits the fragmented spectrum by combining various carrier frequencies. The intrinsic multi-band and multi-standard of CA, along with the existing high peak-to-average power ratio (PAPR), brings the challenges of broadband requirement and back-off (BO) efficiency enhancement when designing radio frequency power amplifiers (PA). The above two challenges inspire research interest in designing of broadband Doherty power amplifiers (DPAs), which maintain the high efficiency at BO power level and perform constantly versus frequency. In this work, the continuous design space was discussed. Output combining and matching network (OCMN) and its impact on the impedances shown to the two transistors were analyzed based on two port network theory. ABCD parameters of matching networks was formulated to accommodate continuous class-B (class-J) operation to DPAs. Second harmonic was terminated to avoid clipping and efficiency degradation. By enlarging design space, the bandwidth was substantially expanded. The proposed design methodology allowed the adsorption of parasitics which was the one of the bandwidth limiting factor. To validate the proposed methodology, an 8 Watts DPA was simulated to operate from 3 GHz to 5 GHz using Cree Gallium nitride (GaN) High-electron-mobility transistors (HEMTs). And simulation results showed that the 6dB BO efficiency was above 40% and Peak-envelope-power (PEP) of 50% over the frequency range of 3GHz to 5GHz. The Doherty power amplifier prototype is fabricated on substrate of Rogers4003C and assembled in house. Continuous wave measurement showed that the PA could provide 8.2 - 10.6 dB gain in the frequency band of 2.7 to 4.3 GHz. The 6 dB back off efficiency was 40% to 43%. And at peak power, the drain efficiency reached 48% to 60%. 80 MHz inter-band modulated signal and 15MHz dual band signal measurement were carried out to investigate the linearizability. In the inter-band measurement, average power around 33dBm and average drain efficiency of 46% was obtained with PAPR of 6.4 dB. ACLR above 48.7 dBc after DPD verified the easiness of linearization for this PA. Dual band measurement using two carriers at 2.8 and 3.2 GHz showed even when the PAPR of two band were 7.6 and 8.0 dB separately, average power of 32.3 dBm power can still be extracted with average efficiency of 40.5%. ACLR of 49.5 and 46.7 dBc of those two bands were good endorsement of the capability of inter-band concurrent amplification.
Substrate Integrated Suspended Line Circuits and Systems
Substrate Integrated Suspended Line Circuits and Systems provides a systematic overview of the new transmission line - the substrate-integrated suspension line (SISL). It details the fundamentals and classical application examples of the SISL. The basic SISL concept and structure, various passive circuits and active circuits, and front-end sub-systems are systematically introduced. Featuring research on topics such as high-performance RF/microwave/mm-wave circuits and system, this book is ideal for researchers, engineers, scientists, scholars, educators, and students. Since transmission line is a fundamental component of microwave and mm-wave circuits, the properties of a transmission line, such as losses, size, and dispersion, are vital to the performance of the whole system. Suspended line has been proved to be an excellent transmission line, as it has attractive features such as low loss, weak dispersion, high power capacity, and low effective dielectric constant. However, Conventional waveguide suspended line circuits require metal housing to form air cavities which is Substrate Integrated Suspended Line Circuits and Systems essential to the operation of suspended lines circuits. Also, the metal shell should provide mechanical support and shielding, which contribute to large size and heavy weight. Meanwhile, precise mechanical fabrication and assembling are strongly required, which brings difficulties to the design and fabrication of conventional suspended line circuits, and the manufacturing cost of suspended line circuits increases correspondingly. In this book, we will introduce a new platform of high-performance transmission line, i.e. substrate integrated suspended line (SISL). SISL keeps all the merits of the suspended line while overcomes the drawbacks of conventional waveguide suspended line circuits. Moreover, it is self-packaged and highly integrated. The basic SISL concept and structure, various passive circuits and active circuits, and front-end sub-systems will be systematically introduced. Featuring research on topics such as high-performance RF/microwave/mm-wave circuits and system, this book is ideally designed for researchers, engineers, scientists, scholars, educators, and students.
RF and Microwave Power Amplifier Design
Author: Andrei Grebennikov
language: en
Publisher: McGraw Hill Professional
Release Date: 2004-09-15
This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.