Ti Sb Te Phase Change Materials Component Optimisation Mechanism And Applications

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Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
Chalcogenides

Author: Alexander V. Kolobov
language: en
Publisher: Springer Science & Business Media
Release Date: 2012-08-22
A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.
Optical Data Storage

Author: Erwin R. Meinders
language: en
Publisher: Springer Science & Business Media
Release Date: 2006-11-15
This is an overview of recording principles, materials aspects, and applications of rewritable optical storage. Elements of data recording, including mark formation, eraseability, direct overwrite strategies, data quality and data stability are explained and extensively discussed. Throughout the book, a mark formation model is described and used to back-up measurement results and support the discussed applications. High-speed and dual-layer recording are analyzed in depth, with proposals to achieve higher performance.