The Rf And Microwave Handbook
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The RF and Microwave Handbook
The recent shift in focus from defense and government work to commercial wireless efforts has caused the job of the typical microwave engineer to change dramatically. The modern microwave and RF engineer is expected to know customer expectations, market trends, manufacturing technologies, and factory models to a degree that is unprecedented in the
RF and Microwave Semiconductor Device Handbook
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
Handbook of RF and Microwave Power Amplifiers
Author: John L. B. Walker
language: en
Publisher: Cambridge University Press
Release Date: 2011-10-13
Whether you are an RF transistor designer, an amplifier designer or a system designer, this is your one-stop guide to RF and microwave transistor power amplifiers. A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN HEMTs), circuit and amplifier design (discrete, hybrid and monolithic), CAD, thermal design, reliability, and system applications/requirements for RF and microwave transistor amplifiers. Covering state-of-the-art developments and emphasising practical communications applications, this is the complete professional reference on the subject.