The Formation Of Structural Imperfections In Semiconductor Silicon

Download The Formation Of Structural Imperfections In Semiconductor Silicon PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get The Formation Of Structural Imperfections In Semiconductor Silicon book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages.
The Formation of Structural Imperfections in Semiconductor Silicon

Author: V. I. Talanin
language: en
Publisher: Cambridge Scholars Publishing
Release Date: 2018-12-14
Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Defects and Impurities in Silicon Materials

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
ICCGE-19/OMVPE-19 Program and Abstracts eBook

Author: ICCGE-19/OMVPE-19/AACG
language: en
Publisher: CTI Meeting Technology
Release Date: 2019-07-11
A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).