Solid State Circuit Design Users Manual
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MOSFET Modeling & BSIM3 User’s Guide
Author: Yuhua Cheng
language: en
Publisher: Springer Science & Business Media
Release Date: 2007-05-08
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Circuit Design for Wireless Communications
Author: Kong-Pang Pun
language: en
Publisher: Springer Science & Business Media
Release Date: 2013-03-09
Circuit Design for Wireless Communications: Improved Techniques for Image Rejection in Wideband Quadrature Receivers is the first book focusing on the subject of image rejection in wireless receiver design, which has never been so important as high level of integration is highly demanded in the current and next generation mobile terminals. In this book, the image rejection problems in various receiver architectures which are suitable for high level of integration, including image-reject, direct conversion and low IF architectures, are studied. The fundamental source of the limitation of the image rejection in these receivers is the imbalance between their in-phase (I) and quadrature (Q) channels, which becomes more problematic when the receivers are of wideband. Besides traditional methods, this book provides novel solutions to the problem, which falls into two broad types. The first type refers to new circuits that produce less I/Q imbalance. This includeshigh performance switched-capacitor Hilbert transformers and precise quadrature sampling circuits. The second type is to compensate the I/Q imbalance, which is possibly frequency-dependent, in digital domain by calibration or signal processing techniques. Design examples have been included. Circuit Design for Wireless Communications: Improved Techniques for Image Rejection in Wideband Quadrature Receivers serves as a very useful reference for wireless design engineers who want to improve the image rejection of their wireless receivers and researchers and students who are interested in this subject.
Design of System on a Chip
Author: Ricardo Reis
language: en
Publisher: Springer Science & Business Media
Release Date: 2004-07-14
Design of System on a Chip is the first of two volumes addressing the design challenges associated with new generations of the semiconductor technology. The various chapters are the compilations of tutorials presented at workshops in Brazil in the recent years by prominent authors from all over the world. In particular the first book deals with components and circuits. Device models have to satisfy the conditions to be computationally economical in addition to be accurate and to scale over various generations of technology. In addition the book addresses issues of the parasitic behavior of deep sub-micron components, such as parameter variations and sub-threshold effects. Furthermore various authors deal with items like mixed signal components and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).