Silicon Nanoelectronics
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Silicon Nanoelectronics
Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology. Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon. Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them. In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in
Nanoscale Silicon Devices
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Silicon
Author: Paul Siffert
language: en
Publisher: Springer Science & Business Media
Release Date: 2013-03-09
Silicon. The evolution and development of humanity are commonly charac terized by the key words Stone Age, Bronze Age, and Iron Age; that is, characterized by materials. Curse or benefit to mankind? The discovery and utilization of semiconductors, particularly of silicon, revolutionized our liv ing conditions, society, social life, and maxims in a few years, even more than what happened during all the material-specified periods before. Per haps, one day, our descendants will call the period at whose beginning we live the Silicon Age. However, to be correct, the present period is character ized of the discovery and development of a whole bunch of new materials and their utilization. These materials are new alloys, ceramics, the plastics and synthetics produced by organic chemistry, composites, biomaterials, and the materials of microelectronics, nanotechnology, and space science. The materi als of microelectronics are silicon, other elemental semiconductors, compound semiconductors, and organic semiconductors. With regard to the interdepen dences of these materials and their utilization, silicon plays a central role as one of the base materials for electronics. Have we lived in the Silicon Age for only half a century and already jumped into a new age of synthetic organic materials for electronics? We do not know. The first intensive work on silicon started more than 50 years ago. One of the European semiconductor laboratories was installed by the industry in a centuries-old, little countryside castle in Pretzfeld, in the north-east of Bavaria, Germany.