Radiation Hardened Design Of Cmos Pixel Sensor For The Micro Vertex Detector Of The Cbm Experiment

Radiation Hardened Design of CMOS Pixel Sensor for the Micro-vertex Detector of the CBM Experiment

The compressed baryonic matter experiment (CBM) will explore the behaviour of nuclear matter at extreme densities using Gold-Gold or proton-Gold collisions. The Micro Vertex Detector (MVD) is the CBM instrument closest to the collisions and is being designed using CMOS pixel sensors. The high-ionization particles generated by these collisions, such as gold or carbon ions and protons, may introduce radiation effects into the MVD sensors, such as: single-event effects (SEE), total ionization dose (TID) effects and displacement damages. In this thesis, we derive a method to implement radiation-hardening-by-design (RHBD) without compromising the essential features of the CMOS circuits, essentially its size. Using dedicated simulations and considering critical functionalities, we selectively introduced RHDB in two digital parts of the MVD sensor prototype, hardening them considerably against SEE : the read-out architecture and a phase-locked loop circuit.

Development of Radiation Hardened Pixel Sensors for Charged Particle Detection

Design of the Micro Vertex Detector of the CBM Esxperiment