Optimization Of Charge Collection Efficiency In Msm Photodetector
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Optimization of Charge Collection Efficiency in MSM Photodetector
The effects of different geometries, heights and concentrations per unit area of gratings in the active region of a metal semiconductor metal photo-detector have been analyzed for enhanced charge collection through electromagnetic field analysis. Plots of the electric field amplitude as it propagates from the constricted grating region to a larger crosssection in the active region have been studied for comparison. This study shows that a hatched top cone shaped grating allows for maximum energy transfer into the active region, thus enhancing collection. The height for this structure is also a minimum over all structures, thus making the hatched cone the optimum design for enhanced collection. The cladding of such structures with SiO2 also appears to contribute to increased energy transfer into the substrate.
Photodiodes
This book describes different kinds of photodiodes for applications in high-speed data communication, biomedical sensing, high-speed measurement, UV-light detection, and high energy physics. The photodiodes discussed are composed of several different semiconductor materials, such as InP, SiC, and Si, which cover an extremely wide optical wavelength regime ranging from infrared light to X-ray, making the suitable for diversified applications. Several interesting and unique topics were discussed including: the operation of high-speed photodiodes at low-temperature for super-conducting electronics, photodiodes for bio-medical imaging, single photon detection, photodiodes for the applications in nuclear physics, and for UV-light detection.
Group III-Nitride Semiconductor Optoelectronics
Author: C. Jayant Praharaj
language: en
Publisher: John Wiley & Sons
Release Date: 2023-10-24
Group III-Nitride Semiconductor Optoelectronics Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. C. Jayant Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Chapters provide thorough connections between theory and experimental advances for optoelectronics and photonics. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III- nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.