On Wafer Microwave De Embedding Techniques
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On-Wafer Microwave Measurements and De-embedding
This new authoritative resource presents the basics of network analyzer measurement equipment and troubleshooting errors involved in the on-wafer microwave measurement process. This book bridges the gap between theoretical and practical information using real-world practices that address all aspects of on-wafer passive device characterization in the microwave frequency range up to 60GHz. Readers find data and measurements from silicon integrated passive devices fabricated and tested in advance CMOS technologies. Basic circuit equations, terms and fundamentals of time and frequency domain analysis are covered. This book also explores the basics of vector network analyzers (VNA), two port S-parameter measurement routines, signal flow graphs, network theory, error models and VNA calibrations with the use of calibration standards.
On-Wafer Microwave De-Embedding Techniques
Wireless communication technology has kept evolving into higher frequency regime to take advantage of wider data bandwidth and higher speed performance. Successful RF circuit design requires accurate characterization of on-chip devices. This greatly relies on robust de-embedding technique to completely remove surrounding parasitics of pad and interconnects that connect device to measurement probes. Complex interaction of fixture parasitic at high frequency has imposed extreme challenges to de-embedding particularly for lossy complementary metal oxide semiconductor (CMOS) device. A generalized network de-embedding technique that avoids any inaccurate lumped and transmission line assumptions on the pad and interconnects of the test structure is presented. The de-embedding strategy has been validated by producing negligible de-embedding error (
Microwave De-embedding
Author: Gilles Dambrine
language: en
Publisher: Elsevier Inc. Chapters
Release Date: 2013-11-09
This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.