Nonlinear Rf Circuits And Nonlinear Vector Network Analyzers
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Nonlinear RF Circuits and Nonlinear Vector Network Analyzers
Author: Patrick Roblin
language: en
Publisher: Cambridge University Press
Release Date: 2011-06-02
With increasingly low-cost and power-efficient RF electronics demanded by today's wireless communication systems, it is essential to keep up to speed with new developments. This book presents key advances in the field that you need to know about and emerging patterns in large-signal measurement techniques, modeling and nonlinear circuit design theory supported by practical examples. Topics covered include: • Novel large-signal measurement techniques that have become available with the introduction of nonlinear vector network analyzers (NVNA), such as the LSNA, PNA-X and SWAP • Direct extraction of device models from large-signal RF dynamic loadlines • Characterization of memory effects (self-heating, traps) with pulsed RF measurements • Interactive design of power-efficient amplifiers (PA) and oscillators using ultra-fast multi-harmonic active load-pull • Volterra and poly-harmonic distortion (X-parameters) behavioral modeling • Oscillator phase noise theory • Balancing, modeling and poly-harmonic linearization of broadband RFIC modulators • Development of a frequency selective predistorter to linearize PAs
Principles and Applications of Vector Network Analyzer Calibration Techniques
Author: J. Apolinar Reynoso Hernández
language: en
Publisher: CRC Press
Release Date: 2024-12-19
This book summarizes the work developed over more than two decades in the field of advanced calibration techniques for vector network analyzers, by the RF and Microwave Group at The Center for Scientific Research and Higher Education of Ensenada, Baja California, Mexico, which is led by Dr. J. Apolinar Reynoso-Hernández, author of this book. This book is written so that every electrical engineer, with knowledge of electrical circuits and linear algebra basics, can understand the principles of VNA calibration techniques. Vector network analyzers are normally used by engineers and researchers working in the RF and microwave field, which usually requires advanced and specialized courses at graduate level. The reader should be able to implement any VNA calibration technique, decide the most adequate calibration for a given measurement condition, and interpret the measurement results, as a seasoned RF metrology expert. Principles and Applications of Vector Network Analyzer Calibration Techniques is a useful book for beginners and professionals working on • Microwave de-embedding and test fixture characterization • Characterization of uniform transmission lines • Load-pull measurements. It is also: • An ideal tutorial for professionals and postgraduate/research stu-dents taking courses in microwave calibration techniques. • A useful textbook for practicing electronics engineering and researchers working in the RF microwave field: calibration techniques and load-pull measurements.
Parameter Extraction and Complex Nonlinear Transistor Models
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.