New Topics In Simulation And Modeling Of Rf Circuits

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New Topics in Simulation and Modeling of RF Circuits

Author: Alexandru Gabriel Gheorghe
language: en
Publisher: CRC Press
Release Date: 2022-09-01
New Topics in Simulation and Modeling of RF Circuits addresses two main topics: simulation of RF circuits and new models of nonlinear power BAW resonators and filters.Since RF circuits have several unique features, and all analysis methods are based on the circuit essential properties, the book begins by describing the properties of RF circuits, characterization of circuits with customary and uncustomary behavior and some theorems of solutions existence and uniqueness for dynamic nonlinear circuits. Thereafter, the main time domain and frequency domain analysis methods for RF circuits are presented. The advantages and disadvantages of each method have been highlighted, and an algorithm for the time step choice in transient analysis based on energy balance errors is also presented. Lastly, the final part contains some nonlinear circuit models of power BAW resonators. The behavioral models for the time domain analysis are simple circuits containing weakly nonlinear elements. The behavioral models for frequency domain analysis are based on the measured values of the frequency dependent S parameters for a set of incident powers. S parameters corresponding to certain intermodulation products of practical interest are also considered. The physical models contain artificial transmission lines with nonlinear circuit elements corresponding to mechanical and electrical nonlinearities.
Recent Topics on Modeling of Semiconductor Processes, Devices, and Circuits

Author: Rasit Onur Topaloglu
language: en
Publisher: Bentham Science Publishers
Release Date: 2011-09-09
"The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transisto"
CMOS RF Modeling, Characterization and Applications

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.