Nanoscale Device Physics
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Nanoscale Transistors
Author: Mark Lundstrom
language: en
Publisher: Springer Science & Business Media
Release Date: 2006-06-18
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
Nanoscale Devices
The primary aim of this book is to discuss various aspects of nanoscale devices design and their applications including transport mechanism, modeling, and circuit applications. Furthermore, the book will develop a strong foundation to understand the need for moving from conventional MOSFET to the novel devices, as well as, how the device physics and transport phenomenon changes with reduction in the device size to a nanoscale regime. Details about the simulation technique and/or fabrication process flow of the various nanoscale devices is included along with simulated results of device performance parameters. The numerical and theoretical methods will be used to describe the related concepts. Key Features, Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, Reviews issues related to optimizing the sub-nanometer device performance, Addresses simulation aspect and/or fabrication process of devices, Explores associated circuit design aspects and applications, Includes design problems at the end of each chapter Book jacket.
Semiconductor Physics
Author: Sandip Tiwari
language: en
Publisher: Oxford University Press
Release Date: 2020-09-22
The subject of semiconductor physics today includes not only many of the aspects that constitute solid state physics, but also much more. It includes what happens at the nanoscale and at surfaces and interfaces, behavior with few interaction events and few carriers --- electrons and their quasi-particle holes --- in the valence bands, the exchange of energies in various forms, the coupling of energetic events over short and long length scales, quantum reversibility tied to macroscale linearity and eventually to nonlinearities, the thermodynamic and statistical consequences of fluctuation-dissipation, and others. This text brings together traditional solid-state approaches from the 20th century with developments of the early part of the 21st century, to reach an understanding of semiconductor physics in its multifaceted forms. It reveals how an understanding of what happens within the material can lead to insights into what happens in its use. The collection of four textbooks in the Electroscience series culminates in a comprehensive understanding of nanoscale devices -- electronic, magnetic, mechanical and optical -- in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.