Modeling Of The Single And Dual Gate Microwave Field Effect Transistors For Computer Aided Design

Modeling of the Single- and Dual-gate Microwave Field Effect Transistors for Computer Aided Design

Technology Computer Aided Design

Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

RF and Microwave Transistor Oscillator Design

The increase of consumer electronics and communications applications using Radio Frequency (RF) and microwave circuits has implications for oscillator design. Applications working at higher frequencies and using novel technologies have led to a demand for more robust circuits with higher performance and functionality, but decreased costs, size and power consumption. As a result, there is also a need for more efficient oscillators. This book presents up to date information on all aspects of oscillator design, enabling a selection of the best oscillator topologies with optimized noise reduction and electrical performance. RF and Microwave Transistor Oscillator Design covers: analyses of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method; information on noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators; information on the stability of oscillations, with discussions on the stability of multi-resonant circuits and the phase plane method; optimized design and circuit techniques, beginning with the empirical and analytic design approaches, moving on to the high-efficiency design technique; general operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations. A valuable reference for practising RF and Microwave designers and engineers, RF and Microwave Transistor Oscillator Design is also useful for lecturers, advanced students and research and design (R&D) personnel.