Memristive Neuromorphics Materials Devices Circuits Architectures Algorithms And Their Co Design


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Memristive Neuromorphics: Materials, Devices, Circuits, Architectures, Algorithms and their Co-Design


Memristive Neuromorphics: Materials, Devices, Circuits, Architectures, Algorithms and their Co-Design

Author: Huanglong Li

language: en

Publisher: Frontiers Media SA

Release Date: 2022-02-21


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Learning in Energy-Efficient Neuromorphic Computing: Algorithm and Architecture Co-Design


Learning in Energy-Efficient Neuromorphic Computing: Algorithm and Architecture Co-Design

Author: Nan Zheng

language: en

Publisher: John Wiley & Sons

Release Date: 2019-12-31


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Explains current co-design and co-optimization methodologies for building hardware neural networks and algorithms for machine learning applications This book focuses on how to build energy-efficient hardware for neural networks with learning capabilities—and provides co-design and co-optimization methodologies for building hardware neural networks that can learn. Presenting a complete picture from high-level algorithm to low-level implementation details, Learning in Energy-Efficient Neuromorphic Computing: Algorithm and Architecture Co-Design also covers many fundamentals and essentials in neural networks (e.g., deep learning), as well as hardware implementation of neural networks. The book begins with an overview of neural networks. It then discusses algorithms for utilizing and training rate-based artificial neural networks. Next comes an introduction to various options for executing neural networks, ranging from general-purpose processors to specialized hardware, from digital accelerator to analog accelerator. A design example on building energy-efficient accelerator for adaptive dynamic programming with neural networks is also presented. An examination of fundamental concepts and popular learning algorithms for spiking neural networks follows that, along with a look at the hardware for spiking neural networks. Then comes a chapter offering readers three design examples (two of which are based on conventional CMOS, and one on emerging nanotechnology) to implement the learning algorithm found in the previous chapter. The book concludes with an outlook on the future of neural network hardware. Includes cross-layer survey of hardware accelerators for neuromorphic algorithms Covers the co-design of architecture and algorithms with emerging devices for much-improved computing efficiency Focuses on the co-design of algorithms and hardware, which is especially critical for using emerging devices, such as traditional memristors or diffusive memristors, for neuromorphic computing Learning in Energy-Efficient Neuromorphic Computing: Algorithm and Architecture Co-Design is an ideal resource for researchers, scientists, software engineers, and hardware engineers dealing with the ever-increasing requirement on power consumption and response time. It is also excellent for teaching and training undergraduate and graduate students about the latest generation neural networks with powerful learning capabilities.

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations


Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Author: Jennifer Rupp

language: en

Publisher: Springer Nature

Release Date: 2021-10-15


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This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.