Materials Reliability In Microelectronics Vi Volume 428
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Materials Reliability in Microelectronics VI: Volume 428
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Thin Films Stresses and Mechanical Properties VI
Author: Shefford P. Baker
language: en
Publisher: Materials Research Society
Release Date: 1996-02-11
Interest in the mechanical properties of thin films remains high throughout the world, as evidenced by the large international contingent represented in this book. With regard to stresses, techniques for sorting out residual stress and strain states are becoming more varied and sophisticated. Discussions include Raman scattering, nonlinear acoustic responses and back-scattered electron imaging microscopies, as well as the more standard wafer-bending and X-ray techniques. Spectroscopy, indenting and the burgeoning field of nanoprobe imaging for the characterization of mechanical properties of thin films are also highlighted. Topics include: mechanical properties of films and multilayers; fracture and adhesion; nanoindentation of films and surfaces; mechanical property methods and modelling; tribological properties of thin films; properties of polymer films; stress effects in thin films and interconnects; epitaxy and strain relief mechanisms, measurements.
Thin Films Stresses and Mechanical Properties VI
Interest in the mechanical properties of thin films remains high throughout the world, as evidenced by the large international contingent represented in this book. With regard to stresses, techniques for sorting out residual stress and strain states are becoming more varied and sophisticated. Discussions include Raman scattering, nonlinear acoustic responses and back-scattered electron imaging microscopies, as well as the more standard wafer-bending and X-ray techniques. Spectroscopy, indenting and the burgeoning field of nanoprobe imaging for the characterization of mechanical properties of thin films are also highlighted. Topics include: mechanical properties of films and multilayers; fracture and adhesion; nanoindentation of films and surfaces; mechanical property methods and modelling; tribological properties of thin films; properties of polymer films; stress effects in thin films and interconnects; epitaxy and strain relief mechanisms, measurements.