Improved Design Of Active Pixel Cmos Sensors For Charged Particle Detection
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Improved Design of Active Pixel CMOS Sensors for Charged Particle Detection
The Department of Energy (DOE) nuclear physics program requires developments in detector instrumentation electronics with improved energy, position and timing resolution, sensitivity, rate capability, stability, dynamic range, and background suppression. The current Phase-I project was focused on analysis of standard-CMOS photogate Active Pixel Sensors (APS) as an efficient solution to this challenge. The advantages of the CMOS APS over traditional hybrid approaches (i.e., separate detection regions bump-bonded to readout circuits) include greatly reduced cost, low power and the potential for vastly larger pixel counts and densities. However, challenges remain in terms of the signal-to-noise ratio (SNR) and readout speed (currently on the order of milliseconds), which is the major problem for this technology. Recent work has shown that the long readout time for photogate APS is due to the presence of (interface) traps at the semiconductor-oxide interface. This Phase-I work yielded useful results in two areas: (a) Advanced three-dimensional (3D) physics-based simulation models and simulation-based analysis of the impact of interface trap density on the transient charge collection characteristics of existing APS structures; and (b) Preliminary analysis of the feasibility of an improved photogate pixel structure (i.e., new APS design) with an induced electric field under the charge collecting electrode to enhance charge collection. Significant effort was dedicated in Phase-I to the critical task of implementing accurate interface trap models in CFDRC's NanoTCAD 3D semiconductor device-physics simulator. This resulted in validation of the new NanoTCAD models and simulation results against experimental (published) data, within the margin of uncertainty associated with obtaining device geometry, material properties, and experimentation details. Analyses of the new, proposed photogate APS design demonstrated several promising trends.
Search for Higgs Boson Decays to Charm Quarks with the ATLAS Experiment and Development of Novel Silicon Pixel Detectors
This book explores the Higgs boson and its interactions with fermions, as well as the detector technologies used to measure it. The Standard Model of Particle Physics has been a groundbreaking theory in our understanding of the fundamental properties of the universe, but it is incomplete, and there are significant hints which require new physics. The discovery of the Higgs boson in 2012 was a substantial confirmation of the Standard Model, but many of its decay modes remain elusive. This book presents the latest search for Higgs boson decays into c-quarks using a proton-proton collision dataset collected by the ATLAS experiment at the Large Hadron Collider (LHC). This decay mode has yet to be observed and requires advanced machine learning algorithms to identify c-quarks in the experiment. The results provide an upper limit on the rate of Higgs boson decays to c-quarks and a direct measurement of the Higgs boson coupling strength to c-quarks. The book also discusses the future of particle physics and the need for significant improvements to the detector to cope with increased radiation damage and higher data rates at the High-Luminosity LHC. It presents the characterization of the ATLAS pixel detector readout chip for the inner detector upgrade (ITk). The chip was subjected to irradiations using X-rays and protons to simulate the radiation environment at the HL-LHC. The tests showed that all readout chip components, including the digital logic and analogue front-end, are sufficiently radiation-tolerant to withstand the expected radiation dose. Finally, this book describes monolithic pixel detectors as a possible technology for future pixel detectors. This book is ideal for individuals interested in exploring particle physics, the Higgs boson, and the development of silicon pixel detectors.
Analog Electronics for Radiation Detection
Analog Electronics for Radiation Detection showcases the latest advances in readout electronics for particle, or radiation, detectors. Featuring chapters written by international experts in their respective fields, this authoritative text: Defines the main design parameters of front-end circuitry developed in microelectronics technologies Explains the basis for the use of complementary metal–oxide semiconductor (CMOS) image sensors for the detection of charged particles and other non-consumer applications Delivers an in-depth review of analog-to-digital converters (ADCs), evaluating the pros and cons of ADCs integrated at the pixel, column, and per-chip levels Describes incremental sigma–delta ADCs, time-to-digital converter (TDC) architectures, and digital pulse-processing techniques complementary to analog processing Examines the fundamental parameters and front-end types associated with silicon photomultipliers used for single visible-light photon detection Discusses pixel sensors with per-pixel TDCs, channel density challenges, and emerging 3D technologies interconnecting detectors and electronics Thus, Analog Electronics for Radiation Detection provides a single source for state-of-the-art information on analog electronics for the readout of radiation detectors.