Hot Carrier Reliability Of Mos Vlsi Circuits


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Hot-Carrier Reliability of MOS VLSI Circuits


Hot-Carrier Reliability of MOS VLSI Circuits

Author: Yusuf Leblebici

language: en

Publisher: Springer Science & Business Media

Release Date: 2012-12-06


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As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.

Reliability of CMOS Analog ICs


Reliability of CMOS Analog ICs

Author: Hakan Kuntman

language: en

Publisher: Springer Nature

Release Date: 2025-07-14


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This book presents recent advances in reliability investigation of MOS transistors and their applications. Theory and experimental results are discussed, in order to demonstrate the efficacy of the techniques presented. Readers will be enabled to improve their designs in application areas of analog signal processing, ranging from very low frequencies at several Hz levels of biomedical signals to RF applications operating at GHz level, from EEG signals to cognitive radio and encrypted communications or low-noise amplifiers in wireless communications.

The VLSI Handbook


The VLSI Handbook

Author: Wai-Kai Chen

language: en

Publisher: CRC Press

Release Date: 2019-07-17


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Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.