High Power Linear Cmos Power Amplifier For Wlan Applications
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High Power, Linear CMOS Power Amplifier for WLAN Applications
The advancement of CMOS technology has enabled a high level of integration in modern, low cost, small form-factor and low power wireless devices. While power amplifiers (PAs) are key components in wireless transceivers, their realization and integration in standard CMOS technology has shown several challenges. The modern wireless standards such as WLAN and LTE, utilize higher order modulation schemes in order to increase the data rate and efficiently use the limited available spectrum and also provide a robust link in a fading environment. These modulations possess a very high peak-to-average ratio (PAR) and require a very linear power amplifier to preserve the integrity of the signal. In this dissertation several linearization and power combining techniques have been proposed to address the challenges of designing a high power and linear PA in CMOS for WLAN applications. To demonstrate these techniques in silicon, three chips have been designed and fabricated in 65nm standard CMOS. In the first chip, a fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are implemented. With a 3.3v supply, the PAs produce a saturated output power of 28.3dBm and 26.7dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4GHz and 5GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25dB is achieved at 22.4dBm for the 2.4GHz band and 20.5dBm for the 5GHz band while transmitting 54Mbs OFDM. In the next two designs, two monolithic power combining schemes for CMOS power amplifiers, distributed-LC and current-mode transformer-based, are compared. Fully integrated 2.4GHz power amplifiers (PAs) using these techniques were fabricated. From a 3.3 V supply, the distributed-LC combined PA produces a saturated power of 31.5dBm with peak PAE of 25%. The current-mode transformer based PA combiner produces 33.5dBm saturated power with 37.6% peak PAE. With gm-linearization and digital pre-distortion, these PAs transmit 25.5dBm and 26.4dBm with -25dB EVM for a 54Mb/s OFDM signal respectively.
Linear CMOS RF Power Amplifiers
Author: Hector Solar Ruiz
language: en
Publisher: Springer Science & Business Media
Release Date: 2013-09-14
The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.
Linear CMOS RF Power Amplifiers for Wireless Applications
Author: Paulo Augusto Dal Fabbro
language: en
Publisher: Springer Science & Business Media
Release Date: 2010-06-22
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.