Gettering And Defect Engineering In Semiconductor Technology Viii
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Gettering and Defect Engineering in Semiconductor Technology VIII
Author: Hermann G. Grimmeiss
language: en
Publisher: Trans Tech Publications Ltd
Release Date: 1999-08-11
GADEST '99 Proceedings of GADEST 99
Gettering and Defect Engineering in Semiconductor Technology VIII
Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field. Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view. Contents Sections: 1. Keynote Address. 2. Invited Papers. 3. Silicon-Based Materials. 4. Gettering Techniques. 5. Oxygen in Silicon and Germanium. 6. Rare Earth Impurities in Silicon. 7. Radiation Effects in Semiconductors. 8. Dislocations in Silicon. 9. Material Characterisation. 10. Device Characterisation. 11. Hydrogen-Related Defects and Processes.
Gettering and Defect Engineering in Semiconductor Technology III
Author: M. Kittler
language: en
Publisher: Trans Tech Publications Ltd
Release Date: 1989-01-01
Proceedings of the 3rd International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST '89) held at Garzau, GDR, October 1989