Euv Pattern Defect Detection Sensitivity Based On Aerial Image Linewidth Measurements

EUV Pattern Defect Detection Sensitivity Based on Aerial Image Linewidth Measurements

As the quality of EUV-wavelength mask inspection microscopes improves over time, the image properties and intensity profiles of reflected light can be evaluated in ever-greater detail. The SEMATECH Berkeley Actinic Inspection Tool (AIT) is one such microscope, featuring mask resolution values that match or exceed those available through lithographic printing in current photoresists. In order to evaluate the defect detection sensitivity of the AIT for dense line patterns on typical masks, the authors study the line width roughness (LWR) on two masks, as measured in the EUV images. They report the through-focus and pitch dependence of contrast, image log slope, linewidth, and LWR. The AIT currently reaches LWR 3[sigma] values close to 9 nm for 175 nm half-pitch lines. This value is below 10% linewidth for nearly all lines routinely measured in the AIT. Evidence suggests that this lower level may arise from the mask's inherent pattern roughness. While the sensitivity limit of the AlT has not yet been established, it is clear that the AIT has the required sensitivity to detect defects that cause 10% linewidth changes in line sizes of 125 nm and larger.

EMLC 2005

Photomask and Next-generation Lithography Mask Technology XI.