Electron Lattice Interactions In Semiconductors
Download Electron Lattice Interactions In Semiconductors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Electron Lattice Interactions In Semiconductors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages.
Electron–Lattice Interactions in Semiconductors
This book presents theoretical treatments on various electronic and atomic processes in non-metallic materials from a unified point of view. It starts with the basic properties of semiconductors, treating the system as a macroscopic association of electrons and ions. In their ground state, fruitful results are derived, such as the band theory for electrons in a periodic lattice and a useful concept of “hole.” The electron–lattice interaction is then introduced as a dynamical response of condensed matter when it is electronically excited. With the aid of proper configuration coordinate diagrams, various phenomena are precisely examined, including carrier scattering, polaron formation, lattice relaxation, Stokes shift and phonon side band in optical spectrum, intrinsic and extrinsic self-trapping, and structural changes. The book provides readers a deep understanding of the physics underlying these phenomena and excellent insight to develop their further research. Graduate students who have finished the basic study on solid-state physics and quantum mechanics and research scientists and engineers in materials science and engineering will benefit immensely from it.
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Author: Osamu Ueda
language: en
Publisher: Springer Science & Business Media
Release Date: 2012-09-22
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.
An Introduction to Quantum Transport in Semiconductors
Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses. The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.