Electromigration Inside Logic Cells
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Electromigration Inside Logic Cells
This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.
Internet of Things. Information Processing in an Increasingly Connected World
This open access book constitutes the refereed post-conference proceedings of the First IFIP International Cross-Domain Conference on Internet of Things, IFIPIoT 2018, held at the 24th IFIP World Computer Congress, WCC 2018, in Poznan, Poland, in September 2018. The 12 full papers presented were carefully reviewed and selected from 24 submissions. Also included in this volume are 4 WCC 2018 plenary contributions, an invited talk and a position paper from the IFIP domain committee on IoT. The papers cover a wide range of topics from a technology to a business perspective and include among others hardware, software and management aspects, process innovation, privacy, power consumption, architecture, applications.
Circadian Rhythms for Future Resilient Electronic Systems
This book describes methods to address wearout/aging degradations in electronic chips and systems, caused by several physical mechanisms at the device level. The authors introduce a novel technique called accelerated active self-healing, which fixes wearout issues by enabling accelerated recovery. Coverage includes recovery theory, experimental results, implementations and applications, across multiple nodes ranging from planar, FD-SOI to FinFET, based on both foundry provided models and predictive models. Presents novel techniques, tested with experiments on real hardware; Discusses circuit and system level wearout recovery implementations, many of these designs are portable and friendly to the standard design flow; Provides circuit-architecture-system infrastructures that enable the accelerated self-healing for future resilient systems; Discusses wearout issues at both transistor and interconnect level, providing solutions that apply to both; Includes coverage of resilient aspects of emerging applications such as IoT.