Doping Engineering For Front End Processing
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Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Doping Engineering for Front-End Processing: Volume 1070
Author: Materials Research Society. Meeting Symposium E.
language: en
Publisher:
Release Date: 2008-10-17
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Doping Engineering for Device Fabrication: Volume 912
This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.