Device Characterization And Modeling Of Large Size Gan Hemts
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Device Characterization and Modeling of Large-Size GaN HEMTs
Author: Jaime Alberto Zamudio Flores
language: en
Publisher: kassel university press GmbH
Release Date: 2012-08-21
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Parameter Extraction and Complex Nonlinear Transistor Models
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Intelligent Computing and Automation
The book presents the proceedings of the 12th International Conference on Frontiers of Intelligent Computing: Theory and Applications (FICTA 2024), held at Intelligent Systems Research Group (ISRG), London Metropolitan University, London, United Kingdom, during June 6–7, 2024. Researchers, scientists, engineers and practitioners exchange new ideas and experiences in the domain of intelligent computing theories with prospective applications in various engineering disciplines in the book. This book is divided into four volumes. It covers broad areas of information and decision sciences, with papers exploring both the theoretical and practical aspects of data-intensive computing, data mining, evolutionary computation, knowledge management and networks, sensor networks, signal processing, wireless networks, protocols and architectures. This book is a valuable resource for postgraduate students in various engineering disciplines.