Depleted Cmos Sensor Development For Pixel Particle Detectors Under High Intensity And High Radiative Dose
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Depleted CMOS Sensor Development for Pixel Particle Detectors Under High Intensity and High Radiative Dose
The Inner Tracker (ITk) system of the ATLAS experiment will be upgraded for the 2026 High Luminosity Large Hadron Collider (HL-LHC) run. The HL-LHC will operate with a center of mass energy of 14 TeV and a peak instantaneous luminosity five times higher than at present. The increased luminosity will result in roughly ten times higher radiation levels and data rates. To cope with the ATLAS requirements in terms of radiation hardness, readout speed and granularity at the HL-LHC, the replacement of the present ATLAS Inner Tracker (ITk) is needed. Two large-scale depleted CMOS sensors in the 150 nm LF-technology called LF-CPIX and LF-MONOPIX, developed in the framework of the ATLAS Inner Tracker (ITK) upgrade for High Luminosity LHC. The work presented here shows the characterization for these three prototypes, with contributions concerning the setup development, 55Fe and 90Sr source calibration, modifications of the FPGA firmware and development of test programs. A main concern was the investigation on the radiation hardness for both the electronics and the sensor parts. We will show results concerning characterizations for these prototypes in the laboratory performance at CPPM, as well as results in multiple radiation campaigns performed at the 24 GeV IRRAD proton facility at CERN, to study the effects of Non-Ionizing Energy Loss (NIEL) and Total Ionizing Dose (TID) on the prototypes.
Ionizing Radiation Effects in Electronics
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Pixel Detectors
Author: Leonardo Rossi
language: en
Publisher: Springer Science & Business Media
Release Date: 2006-01-18
Pixel detectors are a particularly important class of particle and radiation detection devices. They have an extremely broad spectrum of applications, ranging from high-energy physics to the photo cameras of everyday life. This book is a general purpose introduction into the fundamental principles of pixel detector technology and semiconductor-based hybrid pixel devices. Although these devices were developed for high-energy ionizing particles and radiation beyond visible light, they are finding new applications in many other areas. This book will therefore benefit all scientists and engineers working in any laboratory involved in developing or using particle detection.