Density Of States Function And Related Applications In Quantized Structures
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Density-of-states Function And Related Applications In Quantized Structures
Author: Kamakhya Prasad Ghatak
language: en
Publisher: World Scientific
Release Date: 2025-05-29
In recent years there has been considerable interest in studying the DENSITY-OF-STATES (DOS) functions and Related Applications in Quantized Structures of different technologically important materials in low dimensional electronics. The concept of DOS function is of fundamental importance for not only the characterization of semiconductor nanostructures but also in the study of the carrier transport in quantum effect devices. The acoustic mobility limited momentum relaxation time is inversely proportional to the respective DOS function of a particular semiconductor and the DOS function, in turn, is connected to the twenty five important transport topics of quantum effect devices namely the Landau Dia and Pauli's Para Magnetic Susceptibilities, the Einstein's Photoemission, the Einstein Relation, the Debye Screening Length, the Generalized Raman gain, the Normalized Hall coefficient, the Fowler-Nordheim Field Emission, the Gate Capacitance, the Thermoelectric Power, the Plasma Frequency, the Magneto-Thermal effect in Quantized Structures, the Activity coefficient, the Reflection coefficient, the Heat Capacity, the Faraday rotation, the Optical Effective Mass, the Carrier contribution to the elastic constants, the Diffusion coefficient of the minority carriers, the Nonlinear optical response, the Third order nonlinear optical susceptibility, the Righi-Leduc coefficient, the Electric Susceptibility, the Electric Susceptibility Mass, the Electron Diffusion Thermo-power and the Hydrostatic Piezo-resistance Coefficient respectively.This first-of-a-kind monograph investigates the DOS function and the aforementioned applications in quantized structures of tetragonal and non-linear optical, III-V, II-VI, Gallium Phosphide, Germanium, Platinum Antimonide, stressed, IV-VI, Lead Germanium Telluride, II-V, Zinc and Cadmium diphosphides and Bismuth Telluride respectively. We have also formulated the same and the allied physical properties of III-V, II-VI, IV-VI and HgTe/CdTe quantum well Heavily Doped (HD) superlattices with graded interfaces under magnetic quantization, III-V, II-VI, IV-VI and HgTe/CdTe HD effective mass superlattices under magnetic quantization, quantum confined effective mass superlattices and superlattices of HD optoelectronic materials with graded interfaces in addition to other quantized structures respectively.This book covers from elementary applications in the first chapter up to rather advanced investigations in the later chapters. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length and Elastic Constants in various types of quantized structures under different physical conditions. This book contains 222 current open research problems which form an integral part of the text and are useful for both aspiring students and researchers. It is written for graduate / post graduate students, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience, nanotechnology and nanostructured materials in general and this book will be invaluable to all those researching in academic and industrial laboratories in the said cases worldwide.
Dispersion Relations in Heavily-Doped Nanostructures
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Fowler-Nordheim Field Emission
Author: Sitangshu Bhattacharya
language: en
Publisher: Springer Science & Business Media
Release Date: 2012-01-13
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.