Defects And Diffusion In Ii Vi Compounds
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Defects and Diffusion in II-VI Compounds
Author: David Fisher
language: en
Publisher: Trans Tech Publications Ltd
Release Date: 1999-08-25
A 10-Year Retrospective
Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
Author: Peter Capper
language: en
Publisher: Springer Science & Business Media
Release Date: 1997-10-31
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.
Defects and Diffusion in II-VI Compounds
This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT. The other papers discuss the topics of dislocations in molecular beam epitaxial ZnSe layers on GaAs(001), the interdiffusion of Mn and Mg in CdTe-based quantum wells - again reflecting the importance of the (Cd,Hg)Te system, and the transmission electron microscopic study of dislocations in ZnTe/GaAs epitaxial heterostructures. The general subject of grain-boundary diffusion is treated in two papers which consider the grain boundary to be a 3-dimensional structure, rather than adopting the traditional view of its being a merely 2-dimensional interface. Although the specific system analyzed experimentally here is metallic, rather than semiconducting, this innovative approach is very likely to be relevant to the boundaries between semiconductors; with their relatively complex structures.