Cmos Integration Of High Performance Quantum Dot Lasers For Silicon Photonics
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CMOS Integration of High Performance Quantum Dot Lasers for Silicon Photonics
"Integration of III-V components on Si substrates is required for realizing the promise of Silicon Photonic systems. Specifically, the direct bandgap of many III-V materials is required for light sources, efficient modulators and photodetectors. Several different approaches have been taken to integrate III-V lasers into the silicon photonic platform, such as wafer bonding, direct growth, butt coupling, etc. Here, we have devised a novel laser design that overcomes the above limitations. In our approach, we use InAs quantum dot (QD) lasers monolithically integrated with silicon waveguides and other Si photonic passive components. Due to their unique structures, the QD lasers have been proven by several groups to have the combination of high temperature stability, large modulation bandwidth and low power consumption compared with their quantum well counterparts, which makes it an ideal candidate for Si photonic applications. The first section of this dissertation introduces the theory and novelty of QD lasers, the DC and RF characterization methods of QD lasers are also discussed. The second section is focused on the growth of QD gain chip which a broadband gain chip based on QD inhomogeneous broadening properties was demonstrated. In third section, the lasers devices are built on Si substrate by Pd wafer bonding technology. Firstly, a ridge waveguide QD laser is demonstrated in this section which have better heat dissipation and lower threshold current compared to the unbonded lasers. In section four, a on Si comb laser is also developed. Due to inhomogeneous broadening and ultrafast carrier dynamics, InAs quantum dots have key advantages that make them well suited for Mode-locked lasers (MLLs). In section five, a passively mode-locked InAs quantum dots laser on Si is achieved at a repetition rate of ~7.3 GHz under appropriate bias conditions. In section six, a butt-joint integration configuration based on QD lasers and silicon photonics ring resonator is tested by using to translation stage. In order to achieve the on chip butt-joint integration, an on chip laser facet was created in section seven. A novel facet etching method is developed by using Br-ion beam assist etching (Br-IBAE). In section eight, a Pd-GaAs butt-joint integration platform was proposed, a hybrid tunable QD laser which consist of a QD SOA gain chip butt joint coupled with a passive Si3N4 photonic integrated circuit is proof of concept by using an external booster SOA coupled with a Si3N4 ring reflector feedback circuit. The final section summarized the work discussed in this thesis and also discussed some future approaches by using QD lasers integrated with silicon photonics integrated circuits based on the Pd-GaAs wafer bonding butt-joint coupled platform."--Abstract.
Future Directions in Silicon Photonics
Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics
Quantum Dot Lasers on Silicon
This book provides guidelines and design rules for developing high-performance, low-cost, and energy-efficient quantum-dot (QD) lasers for silicon photonic integrated circuits (PIC), optical frequency comb generation, and quantum information systems. To this end, the nonlinear properties and dynamics of QD lasers on silicon are investigated in depth by both theoretical analysis and experiment. This book aims at addressing four issues encountered in developing silicon PIC: 1) The instability of laser emission caused by the chip-scale back-reflection. During photonic integration, the chip-scale back-reflection is usually responsible for the generation of severe instability (i.e., coherence collapse) from the on-chip source. As a consequence, the transmission performance of the chip could be largely degraded. To overcome this issue, we investigate the nonlinear properties and dynamics of QD laser on Si in this book to understand how can it be applied to isolator-free photonic integration in which the expensive optical isolator can be avoided. Results show that the QD laser exhibits a high degree of tolerance for chip-scale back-reflections in absence of any instability, which is a promising solution for isolator-free applications. 2) The degradation of laser performance at a high operating temperature. In this era of Internet-of-Thing (IoT), about 40% of energy is consumed for cooling in the data center. In this context, it is important to develop a high-temperature continuous-wave (CW) emitted laser source. In this book, we introduce a single-mode distributed feedback (DFB) QD laser with a design of optical wavelength detuning (OWD). By taking advantage of the OWD technique and the high-performance QD with high thermal stability, all the static and dynamical performances of the QD device are improved when the operating temperature is high. This study paves the way for developing uncooled and isolator-free PIC. 3) The limited phase noise level and optical bandwidth of the laser are the bottlenecks for further increasing the transmission capacity. To improve the transmission capacity and meet the requirement of the next generation of high-speed optical communication, we introduce the QD-based optical frequency comb (OFC) laser in this book. Benefiting from the gain broadening effect and the low-noise properties of QD, the OFC laser is realized with high optical bandwidth and low phase noise. We also provide approaches to further improve the laser performance, including the external optical feedback and the optical injection. 4) Platform with rich optical nonlinearities is highly desired by future integrated quantum technologies. In this book, we investigate the nonlinear properties and four-wave mixing (FWM) of QD laser on Si. This study reveals that the FWM efficiency of QD laser is more than ten times higher than that of quantum-well laser, which gives insight into developing a QD-based silicon platform for quantum states of light generation. Based on the results in this book, scientists, researchers, and engineers can come up with an informed judgment in utilizing the QD laser for applications ranging from classical silicon PIC to integrated quantum technologies.