Broadband Doherty Power Amplifiers With Enhanced Linearity For Emerging Radio Transmitters

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Broadband Doherty Power Amplifiers with Enhanced Linearity for Emerging Radio Transmitters

The ever-increasing demand for utilizing wireless spectra has led to development of spectrally efficient radio systems. While these systems offer much higher data throughput, they employ more sophisticated modulation schemes, which result in wideband signals with high peak-to-average power ratios. These signal characteristics significantly complicate the design of RF transmitters, particularly power amplifiers, in terms of power efficiency and linearity requirements. Furthermore, upcoming wireless standards, such as long term evolution advanced (LTE-A) require adoption of carrier aggregation which incorporates multiple component carriers to yield aggregated channels of larger bandwidth (up to 100 MHz). On the other hand, the emerging systems are expected to support legacy standards with minimum area, cost, and power overhead, and thus call for highly-efficient linear broadband power amplifiers capable of efficiently amplifying concurrent modulated signals located over a broad carrier frequency range. This thesis focuses on Doherty power amplifiers (DPAs) with extended high-efficiency range, enhanced bandwidth and improved linearity as a solution for high-efficiency multi-band multi-standard transmitters. It addresses three major concerns associated with DPAs, namely, back-off efficiency, bandwidth, and linearity.
Broadband RF and Microwave Amplifiers

Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Bandwidth and Efficiency Enhancement in Radio Frequency Power Amplifiers for Wireless Transmitters

This book focuses on broadband power amplifier design for wireless communication. Nonlinear model embedding is described as a powerful tool for designing broadband continuous Class-J and continuous class F power amplifiers. The authors also discuss various techniques for extending bandwidth of load modulation based power amplifiers, such as Doherty power amplifier and Chireix outphasing amplifiers. The book also covers recent trends on digital as well as analog techniques to enhance bandwidth and linearity in wireless transmitters. Presents latest trends in designing broadband power amplifiers; Covers latest techniques for using nonlinear model embedding in designing power amplifiers based on waveform engineering; Describes the latest techniques for extending bandwidth of load modulation based power amplifiers such as Doherty power amplifier and Chireix outphasing amplifiers; Includes coverage of hybrid analog/digital predistortion as wideband solution for wireless transmitters; Discusses recent trends on on-chip power amplifier design with GaN /GaAs MMICs for high frequency applications.