Advanced Metallization For Devices And Circuits Science Technology And Manufacturability


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ULSI Process Integration 6


ULSI Process Integration 6

Author: C. Claeys

language: en

Publisher: The Electrochemical Society

Release Date: 2009-09


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ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

Chemical Mechanical Planarization in IC Device Manufacturing III


Chemical Mechanical Planarization in IC Device Manufacturing III

Author: Robert Leon Opila

language: en

Publisher: The Electrochemical Society

Release Date: 2000


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This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).

Tribology In Chemical-Mechanical Planarization


Tribology In Chemical-Mechanical Planarization

Author: Hong Liang

language: en

Publisher: CRC Press

Release Date: 2005-03-01


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Illustrating their intersecting role in manufacturing and technological development, this book examines tribological principles and their applications in CMP, including integrated circuits, basic concepts in surfaces of contacts, and common defects as well as friction, lubrication fundamentals, and the basics of wear. The book concludes its focus with mechanical aspects of CMP, pad materials, elastic modulus, and cell buckling. As the first source to integrate CMP and tribology, Tribology in Chemical-Mechanical Planarization provides applied scientists and engineers in the fields of semiconductors and microelectronics with clear foresight to the future of this technology.