3d Integration Of Resistive Switching Memory


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3D Integration of Resistive Switching Memory


3D Integration of Resistive Switching Memory

Author: Qing Luo

language: en

Publisher: CRC Press

Release Date: 2023-04-13


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This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

3D Integration of Resistive Switching Memory


3D Integration of Resistive Switching Memory

Author: Qing Luo

language: en

Publisher:

Release Date: 2023


DOWNLOAD





"This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--

Advances In 3d Integrated Circuits And Systems


Advances In 3d Integrated Circuits And Systems

Author: Hao Yu

language: en

Publisher: World Scientific

Release Date: 2015-08-28


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3D integration is an emerging technology for the design of many-core microprocessors and memory integration. This book, Advances in 3D Integrated Circuits and Systems, is written to help readers understand 3D integrated circuits in three stages: device basics, system level management, and real designs.Contents presented in this book include fabrication techniques for 3D TSV and 2.5D TSI; device modeling; physical designs; thermal, power and I/O management; and 3D designs of sensors, I/Os, multi-core processors, and memory.Advanced undergraduates, graduate students, researchers and engineers may find this text useful for understanding the many challenges faced in the development and building of 3D integrated circuits and systems.


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