Microelectronics Semiconductor Physics Andic Technology; Ch 2 Nanoelectronics; Ch 3 The Mos Field Effect Transistor; Ch 4 Digital Circuits; Ch 5 The Bipolar Junction Transistor; Ch 6 Digital Electronics; Ch 7 Switching Circuit; Ch 8 Single State Bipolar

Download Microelectronics Semiconductor Physics Andic Technology; Ch 2 Nanoelectronics; Ch 3 The Mos Field Effect Transistor; Ch 4 Digital Circuits; Ch 5 The Bipolar Junction Transistor; Ch 6 Digital Electronics; Ch 7 Switching Circuit; Ch 8 Single State Bipolar PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Microelectronics Semiconductor Physics Andic Technology; Ch 2 Nanoelectronics; Ch 3 The Mos Field Effect Transistor; Ch 4 Digital Circuits; Ch 5 The Bipolar Junction Transistor; Ch 6 Digital Electronics; Ch 7 Switching Circuit; Ch 8 Single State Bipolar book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages.
System Integration

The development of large-scale integrated systems-on-a-chip has had a dramatic effect on circuit design methodology. Escalating requirements for low-power, high-chip density circuits and systems have resulted in increasingly complex Bipolar, CMOS and BICMOS technologies. In order to design cost-effective and reliable systems a thorough understanding of the relationship between the individual components and their impact on the performance of the integrated system is required. Combining coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume, this book will appeal to practising engineers, circuit designers and physicists working in IC-production, product engineering, quality management and quality testing. Postgraduate students in microelectronics, electrical and computer engineering will also find this book a useful reference. (Midwest).
Nanoscale Transistors

Author: Mark Lundstrom
language: en
Publisher: Springer Science & Business Media
Release Date: 2006-06-18
Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.